Inverted Microscope iPHEMOS Series

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iPHEMOS-DD

iPHEMOS-DD

iPHEMOS-DD

The inverted emission microscope is a backside analysis system designed to identify failure locations by detecting the light and heat emitted from the defects in semiconductor devices.
The signal detection from backside facilitates the use of probing and probe card to the wafer surface, and the sample setting can be performed smoothly. The platform, possible to mount multiple detectors and lasers, enables the selection of the optimum detector for performing various analysis methods such as light emission and heat generation analysis, IR-OBIRCH analysis, and others; moreover, letting dynamic analysis perform efficiently by tester connection.

●iPHEMOS-DD
By connecting directly to the LSI tester, signal delay due to the connection cable length can be reduced, and the analysis of high-speed driving samples is possible. Direct docking dedicated prober enables multi-pin needle attachment to 300 mm wafers and with the additional option, it is possible to perform package analysis as well as pin-needle attachment by a manipulator.

Example of connection to the LSI tester

Features

  • Two ultra-high sensitivity cameras mountable for emission analysis and thermal analysis
  • Lasers for up to 3 wavelengths and a probe light source for EOP are mountable
  • Multi-platform capable of mounting multiple detectors
  • High sensitivity macro lens and up to 10 lenses suitable for each detector sensitivity wavelength

Options

  • Includes laser scan system
  • Emission analysis with high-sensitivity near-infrared camera
  • Thermal analysis with high-sensitivity mid-infrared camera
  • IR-OBIRCH analysis
  • Dynamic analysis by laser irradiation
  • EO probing analysis
  • High-resolution and high-sensitivity analysis using NanoLens
  • Connects to CAD Navigation
  • Connects to LSI tester

Display functions
Superimposed display/contrast enhancement function

The iPHEMOS-DD superimposes the emission image on a high-resolution pattern image to localize defect points quickly. The contrast enhancement function makes an image clearer and more detailed.

Display function

  • Annotations: Comments, arrows, and other indicators can be displayed on an image at any location desired.
  • Scale display: The scale width can be displayed on the image using segments.
  • Grid display: Vertical and horizontal grid lines can be displayed on the image.
  • Thumbnail display: Images can be stored and recalled as thumbnails, and image information such as stage coordinates can be displayed.
  • Split screen display: Pattern images, emission images, superimposed images, and reference images can be displayed in a 4-window screen at once.

Specifications

Line voltage AC 200 V (50 Hz/60 Hz)
Power consumption Approx. 1400 VA (Max. 3300 VA)
Vacuum Approx. 80 kPa or more
Compressed air 0.5 MPa to 0.7 MPa
Dimensions/Weights Main unit: 1980 mm (W)×1270 mm (D)×834 mm (H), Approx. 1700 kg
Control rack: 880 mm (W)×700 mm (D)×1842 mm (H), Approx. 300 kg
Optional desk: 1400 mm (W)×800 mm (D)×700 mm (H), Approx. 60 kg

*Weight of iPHEMOS-DD main unit includes a prober or equivalent item.

 


日本滨松光子学株式会社(HAMAMATSU)是全球光子技术、EFA领域的领导企业。自1953年成立以来,EFA失效分析产品销往全球半导体各大企业,拥有数量最多的半导体和面板行业客户。HAMAMATSU为客户提供EFA失效分析领域的缺陷定位解决方案,开发的微光显微镜是业界主流的高分辨率热点定位设备,且拥有多项专利产品。设备具备Thermal,EMMI,OBIRCH等分析功能方法。