The inverted emission microscope is a backside analysis system designed to identify failure locations by detecting the light and heat emitted from the defects in semiconductor devices.
The signal detection from backside facilitates the use of probing and probe card to the wafer surface, and the sample setting can be performed smoothly. The platform, possible to mount multiple detectors and lasers, enables the selection of the optimum detector for performing various analysis methods such as light emission and heat generation analysis, IR-OBIRCH analysis, and others; moreover, letting dynamic analysis perform efficiently by tester connection.
By connecting directly to the LSI tester, signal delay due to the connection cable length can be reduced, and the analysis of high-speed driving samples is possible. Direct docking dedicated prober enables multi-pin needle attachment to 300 mm wafers and with the additional option, it is possible to perform package analysis as well as pin-needle attachment by a manipulator.
The iPHEMOS-DD superimposes the emission image on a high-resolution pattern image to localize defect points quickly. The contrast enhancement function makes an image clearer and more detailed.
|Line voltage||AC 200 V (50 Hz/60 Hz)|
|Power consumption||Approx. 1400 VA (Max. 3300 VA)|
|Vacuum||Approx. 80 kPa or more|
|Compressed air||0.5 MPa to 0.7 MPa|
|Dimensions/Weights||Main unit: 1980 mm (W)×1270 mm (D)×834 mm (H), Approx. 1700 kg
Control rack: 880 mm (W)×700 mm (D)×1842 mm (H), Approx. 300 kg
Optional desk: 1400 mm (W)×800 mm (D)×700 mm (H), Approx. 60 kg
*Weight of iPHEMOS-DD main unit includes a prober or equivalent item.