The PHEMOS-1000 is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by semiconductor device defects. Since the PHEMOS-1000 is usable in combination with a general-purpose prober, you can do various analysis tasks by using the sample setups you are already familiar with. Installing an optional laser scan system allows acquiring high-resolution pattern images. Different types of detectors are available for various analysis techniques such as emission analysis, thermal analysis, and IR-OBIRCH analysis. The PHEMOS-1000 supports a wide variety of tasks and applications ranging from prober socket boards to a large-size 300 mm wafer prober.
The PHEMOS-1000 superimposes the emission image on a high-resolution pattern image to localize defect points quickly. The contrast enhancement function makes an image clearer and more detailed.
|Dimensions/Weights||Main unit: 1340 mm (W)×1200 mm (D)×2110 mm (H), Approx. 1500 kg
Control rack: 880 mm (W)×820 mm (D)×1542 mm (H), Approx. 150 kg
Operation desk: 1000 mm (W)×800 mm (D)×700 mm (H), Approx. 45 kg
|Line voltage||AC200 V (50 Hz/60 Hz)|
|Power consumption||Approx. 1400 VA (Max. 3300 VA)|
|Vacuum||Approx. 80 kPa or more|
|Compressed air||0.5 MPa to 0.7 MPa|
* Weight of PHEMOS-1000 main unit includes a prober or equivalent item.